IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Transistor Type :
1 N-Channel
Reach Compliance Code :
Unknown
Power Dissipation (Max) :
480W (Tc)
Max Operating Temperature :
175 °C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Power Dissipation-Max :
480W Tc
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
18 ns
Channel Mode :
Enhancement
Base Product Number :
IXFH110
Drain to Source Resistance :
13 mΩ
Factory Lead Time :
30 Weeks
RoHS :
Compliant
Max Power Dissipation :
480 W
Manufacturer :
IXYS
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Product :
Power MOSFETs
Rds On Max :
13 mΩ
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Number of Channels :
1 Channel
Published :
2008
Terminal Finish :
TIN SILVER COPPER
Avalanche Energy Rating (Eas) :
800 mJ
DS Breakdown Voltage-Min :
150V
Configuration :
Single
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Supplier Device Package :
TO-247AD (IXFH)
Subcategory :
MOSFETs
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
JESD-609 Code :
e1
Current - Continuous Drain (Id) @ 25°C :
110A Tc
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Mount :
Through Hole
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Package / Case :
TO-247-3
Series :
TrenchT2™
Pulsed Drain Current-Max (IDM) :
300A
Min Operating Temperature :
-55 °C
Package :
Tube
Transistor Application :
SWITCHING
Number of Terminations :
3
Type :
Power MOSFET
Tradename :
HiPerFET
Vgs (Max) :
±20V
Power Dissipation :
480W
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Turn-Off Delay Time :
33 ns
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
150V
Transistor Polarity :
N-Channel
Packaging :
Tube
Maximum Operating Temperature :
+ 175 C
JEDEC-95 Code :
TO-247AD
Input Capacitance :
8.6 nF
Rise Time :
16ns
Case Connection :
DRAIN
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Product Type :
MOSFET
Number of Elements :
1
Drain-source On Resistance-Max :
0.013Ohm
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
Continuous Drain Current (ID) :
110A
Mounting Type :
Through Hole
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Type:Power MOSFET, Mounting Type:Through Hole, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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