IXFH110N25T

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Mfr.Part #
IXFH110N25T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 110A TO247AD
Stock
245
In Stock :
245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Power Dissipation (Max) :
694W (Tc)
Drain-source On Resistance-Max :
0.024Ohm
Tradename :
HiPerFET
Base Product Number :
IXFH110
Mounting Style :
Through Hole
Number of Elements :
1
Package :
Tube
Product Category :
MOSFET
Rds On Max :
24 mΩ
Pulsed Drain Current-Max (IDM) :
300A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
694W Tc
Package / Case :
TO-247-3
Drain to Source Voltage (Vdss) :
250V
Drain Current-Max (Abs) (ID) :
110 A
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
FET Feature :
-
Power Dissipation-Max (Abs) :
694 W
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Published :
2012
Pin Count :
3
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
250V
Continuous Drain Current (ID) :
110A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Power Dissipation :
694 W
RoHS :
Compliant
JESD-609 Code :
e1
Packaging :
Tube
Terminal Position :
Single
Mount :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance :
9.4 nF
Qualification Status :
Not Qualified
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Series :
TrenchHV™
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Factory Lead Time :
30 Weeks
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
Maximum Operating Temperature :
+ 175 C
JEDEC-95 Code :
TO-247AD
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Number of Terminals :
3
Supplier Device Package :
TO-247AD (IXFH)
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
Pbfree Code :
yes
Manufacturer :
IXYS
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
1000 mJ
Datasheets
IXFH110N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXFH110N25T pinout, IXFH110N25T datasheet PDF, IXFH110N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N25T


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3

IXFH110N25T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH110N25T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)


IXFH110N25T Applications


There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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