IXFH10N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Terminal Position :

Single

Width :

5.3 mm

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

380W Tc

Transistor Application :

SWITCHING

Rise Time :

45 ns

Power Dissipation (Max) :

380W (Tc)

Package / Case :

TO-247-3

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

380 W

Height :

21.46 mm

Product Status :

Active

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Product Category :

MOSFET

Channel Mode :

Enhancement

Brand :

IXYS

Avalanche Energy Rating (Eas) :

500 mJ

Vgs (Max) :

±30V

JESD-609 Code :

e1

Pin Count :

3

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Package :

Tube

Supplier Device Package :

TO-247AD (IXFH)

Transistor Type :

1 N-Channel

Number of Elements :

1

Series :

HiPerFET™, PolarP2™

JEDEC-95 Code :

TO-247

Base Product Number :

IXFH10

Channel Type :

N Channel

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

25A

Length :

16.26 mm

RoHS :

Compliant

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

3.03 nF

Manufacturer :

IXYS

Max Power Dissipation :

380 W

DS Breakdown Voltage-Min :

1000V

Number of Terminals :

3

Qualification :

-

Number of Terminations :

3

Drain-source On Resistance-Max :

1.4 Ω

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Pbfree Code :

yes

Surface Mount :

No

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

1000V

Mount :

Through Hole

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Type :

Polar HiPerFET Power MOSFET

Rds On Max :

1.4 Ω

Number of Channels :

1 Channel

Continuous Drain Current Id :

10A

Operating Mode :

ENHANCEMENT MODE

Tradename :

HiPerFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3030pF @ 25V

Factory Lead Time :

30 Weeks

Reach Compliance Code :

Compliant

Published :

2008

Drain Current-Max (Abs) (ID) :

10 A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Polarity :

N-Channel

Power Dissipation :

380W