IXFH120N15P
- Mfr.Part #
- IXFH120N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 120A TO247AD
- Stock
- 60
- In Stock :
- 60
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.3mm
- Pin Count :
- 3
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Subcategory :
- MOSFETs
- Number of Elements :
- 1
- Tradename :
- HiPerFET
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements per Chip :
- 1
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 26 ns
- Supplier Device Package :
- TO-247AD (IXFH)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS
- Package Type :
- TO-247AD
- Input Capacitance (Ciss) (Max) @ Vds :
- 4900pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 260A
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Package / Case :
- TO-247-3
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- Series :
- PolarHT™ HiPerFET™
- Maximum Operating Temperature :
- +175 °C
- Base Product Number :
- IXFH120
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Mount :
- Through Hole
- Length :
- 16.26mm
- Mounting Style :
- Through Hole
- Drain-source On Resistance-Max :
- 0.016Ohm
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 150V
- Additional Feature :
- AVALANCHE ENERGY RATED
- Power Dissipation-Max :
- 600W Tc
- Power Dissipation :
- 600W
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 500mA, 10V
- Height :
- 21.46mm
- Reach Compliance Code :
- Unknown
- JEDEC-95 Code :
- TO-247AD
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 120A
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 42ns
- Terminal Position :
- Single
- Published :
- 2006
- Package :
- Box
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 85 ns
- Turn On Delay Time :
- 33 ns
- REACH SVHC :
- No SVHC
- Channel Type :
- N
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 600W (Tc)
- DS Breakdown Voltage-Min :
- 150 V
- Drain to Source Breakdown Voltage :
- 150V
- Product Category :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- -55 °C
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- JESD-609 Code :
- e1
- Number of Channels :
- 1 Channel
- Datasheets
- IXFH120N15P

N-Channel Tube 16m Ω @ 500mA, 10V ±20V 4900pF @ 25V 150nC @ 10V 150V TO-247-3
IXFH120N15P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 260A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 33 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH120N15P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)
IXFH120N15P Applications
There are a lot of IXYS
IXFH120N15P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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