IXFH120N15P

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Mfr.Part #
IXFH120N15P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 120A TO247AD
Stock
60
In Stock :
60

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
5.3mm
Pin Count :
3
Number of Terminals :
3
Element Configuration :
Single
Subcategory :
MOSFETs
Number of Elements :
1
Tradename :
HiPerFET
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Number of Elements per Chip :
1
Product Type :
MOSFET
Fall Time (Typ) :
26 ns
Supplier Device Package :
TO-247AD (IXFH)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Package Type :
TO-247AD
Input Capacitance (Ciss) (Max) @ Vds :
4900pF @ 25V
Pulsed Drain Current-Max (IDM) :
260A
Product Status :
Active
Avalanche Energy Rating (Eas) :
2000 mJ
Package / Case :
TO-247-3
Brand :
IXYS
ECCN Code :
EAR99
Channel Mode :
Enhancement
RoHS :
Details
Number of Terminations :
3
Transistor Polarity :
N-Channel
Pbfree Code :
yes
Series :
PolarHT™ HiPerFET™
Maximum Operating Temperature :
+175 °C
Base Product Number :
IXFH120
Surface Mount :
No
Mounting Type :
Through Hole
Threshold Voltage :
5V
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Mount :
Through Hole
Length :
16.26mm
Mounting Style :
Through Hole
Drain-source On Resistance-Max :
0.016Ohm
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
150V
Additional Feature :
AVALANCHE ENERGY RATED
Power Dissipation-Max :
600W Tc
Power Dissipation :
600W
Rds On (Max) @ Id, Vgs :
16m Ω @ 500mA, 10V
Height :
21.46mm
Reach Compliance Code :
Unknown
JEDEC-95 Code :
TO-247AD
Case Connection :
DRAIN
Packaging :
Tube
Continuous Drain Current (ID) :
120A
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
42ns
Terminal Position :
Single
Published :
2006
Package :
Box
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
85 ns
Turn On Delay Time :
33 ns
REACH SVHC :
No SVHC
Channel Type :
N
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
600W (Tc)
DS Breakdown Voltage-Min :
150 V
Drain to Source Breakdown Voltage :
150V
Product Category :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
-55 °C
Number of Pins :
3
Vgs(th) (Max) @ Id :
5V @ 4mA
JESD-609 Code :
e1
Number of Channels :
1 Channel
Datasheets
IXFH120N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N15P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Channels:1 Channel, IXFH120N15P pinout, IXFH120N15P datasheet PDF, IXFH120N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N15P


N-Channel Tube 16m Ω @ 500mA, 10V ±20V 4900pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH120N15P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 260A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 33 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N15P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IXFH120N15P Applications


There are a lot of IXYS
IXFH120N15P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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