IXFH86N30T
- Mfr.Part #
- IXFH86N30T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 86A TO247AD
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code :
- TO-247
- Product Type :
- MOSFET
- Surface Mount :
- No
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Base Product Number :
- IXFH86
- Mounting Style :
- Through Hole
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 300V
- Power Dissipation-Max :
- 860W Tc
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 86 A
- Transistor Application :
- SWITCHING
- Rise Time :
- 18 ns
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 43A, 10V
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Number of Terminals :
- 3
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 11300pF @ 25V
- Published :
- 2009
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 300V
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- HiPerFET™, TrenchT2™
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 860W (Tc)
- Transistor Polarity :
- N-Channel
- Width :
- 5.3 mm
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 830 W
- Transistor Type :
- 1 N-Channel
- Type :
- Trench HiperFET Power MOSFET
- Supplier Device Package :
- TO-247AD (IXFH)
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 190A
- Number of Terminations :
- 3
- Length :
- 16.26 mm
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 30 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.043Ohm
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 86A
- Package :
- Tube
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 21.46 mm
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HiPerFET
- Product Status :
- Active
- Datasheets
- IXFH86N30T

N-Channel Tube 43m Ω @ 43A, 10V ±20V 11300pF @ 25V 180nC @ 10V 300V TO-247-3
IXFH86N30T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 11300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 86A.86 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 190A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH86N30T Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 86A
based on its rated peak drain current 190A.
a 300V drain to source voltage (Vdss)
IXFH86N30T Applications
There are a lot of IXYS
IXFH86N30T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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