IXFH86N30T

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Mfr.Part #
IXFH86N30T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 86A TO247AD
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-247
Product Type :
MOSFET
Surface Mount :
No
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
86A Tc
Base Product Number :
IXFH86
Mounting Style :
Through Hole
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
300V
Power Dissipation-Max :
860W Tc
Transistor Element Material :
SILICON
Number of Channels :
1 Channel
Vgs (Max) :
±20V
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
86 A
Transistor Application :
SWITCHING
Rise Time :
18 ns
Rds On (Max) @ Id, Vgs :
43m Ω @ 43A, 10V
Mount :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Number of Elements :
1
Mounting Type :
Through Hole
Number of Terminals :
3
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
11300pF @ 25V
Published :
2009
Terminal Form :
THROUGH-HOLE
Drain to Source Voltage (Vdss) :
300V
Terminal Position :
Single
Package Shape :
RECTANGULAR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
HiPerFET™, TrenchT2™
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
5V @ 4mA
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-247-3
Power Dissipation (Max) :
860W (Tc)
Transistor Polarity :
N-Channel
Width :
5.3 mm
Channel Mode :
Enhancement
RoHS :
Details
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
830 W
Transistor Type :
1 N-Channel
Type :
Trench HiperFET Power MOSFET
Supplier Device Package :
TO-247AD (IXFH)
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Pulsed Drain Current-Max (IDM) :
190A
Number of Terminations :
3
Length :
16.26 mm
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
30 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.043Ohm
Brand :
IXYS
Avalanche Energy Rating (Eas) :
2000 mJ
JESD-609 Code :
e1
Continuous Drain Current (ID) :
86A
Package :
Tube
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
Height :
21.46 mm
Manufacturer :
IXYS
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Product Status :
Active
Datasheets
IXFH86N30T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, Type:Trench HiperFET Power MOSFET, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFH86N30T pinout, IXFH86N30T datasheet PDF, IXFH86N30T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH86N30T


N-Channel Tube 43m Ω @ 43A, 10V ±20V 11300pF @ 25V 180nC @ 10V 300V TO-247-3

IXFH86N30T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 11300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 86A.86 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 190A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH86N30T Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 86A
based on its rated peak drain current 190A.
a 300V drain to source voltage (Vdss)


IXFH86N30T Applications


There are a lot of IXYS
IXFH86N30T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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