IXFH80N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.015 Ω

Radiation Hardening :

No

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

100V

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Pbfree Code :

yes

JESD-609 Code :

e1

Power Dissipation :

360W

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Power Dissipation-Max :

360W Tc

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-247

Resistance :

150mOhm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Number of Terminals :

3

Vgs(th) (Max) @ Id :

4V @ 4mA

FET Type :

N-Channel

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

15m Ω @ 40A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-247AD (IXFH)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

80A

Continuous Drain Current (ID) :

80A

Rise Time :

70ns

Lead Free :

Lead Free

Number of Pins :

3

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

68 ns

Qualification Status :

Not Qualified

Manufacturer :

IXYS Corporation

DS Breakdown Voltage-Min :

100 V

Moisture Sensitivity Level (MSL) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Product Status :

Obsolete

Reach Compliance Code :

Compliant

Number of Terminations :

3

FET Feature :

--

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Series :

HiPerFET™

Factory Lead Time :

8 Weeks

Power Dissipation (Max) :

360W (Tc)

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Fall Time (Typ) :

30 ns

Pin Count :

3

Drain to Source Voltage (Vdss) :

100V

Base Product Number :

IXFH80

Avalanche Energy Rating (Eas) :

1500 mJ

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Transistor Application :

SWITCHING

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

320 A

Packaging :

Tube