IXFH7N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-247

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Configuration :

Single

Published :

2000

Drain-source On Resistance-Max :

1.4 Ω

Voltage - Rated DC :

800V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

800V

Number of Terminals :

3

Length :

16.26 mm

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

180W

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

7A

Tradename :

HyperFET

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

FET Feature :

--

Drain to Source Voltage (Vdss) :

800V

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 3.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation Ambient-Max :

180 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

5.3 mm

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Transistor Polarity :

N-Channel

Power Dissipation-Max (Abs) :

180 W

Base Product Number :

IXFH7

Pin Count :

3

Number of Terminations :

3

Supplier Device Package :

TO-247AD (IXFH)

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Mount :

Through Hole

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Package Shape :

RECTANGULAR

Rise Time :

40ns

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

DS Breakdown Voltage-Min :

800 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

Reach Compliance Code :

Compliant

JESD-609 Code :

e1

Mounting Style :

Through Hole

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4.5V @ 2.5mA

Drain Current-Max (Abs) (ID) :

7A

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

28A

Product Category :

MOSFET

Fall Time (Typ) :

60 ns

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

100 ns

Product Type :

MOSFET

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Power Dissipation-Max :

180W Tc

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

7A

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation (Max) :

180W (Tc)

Product Status :

Active

Height :

21.46 mm

FET Type :

N-Channel