IXFH74N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

480W Tc

Drain to Source Breakdown Voltage :

200V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

200 V

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Turn On Delay Time :

23 ns

Vgs (Max) :

±20V

RoHS :

Details

ECCN Code :

EAR99

Width :

5.3mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

JEDEC-95 Code :

TO-247

Channel Type :

N

Power Dissipation :

480W

Package Type :

TO-247

Supplier Device Package :

TO-247AD (IXFH)

Number of Pins :

3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Pin Count :

3

FET Feature :

--

Rise Time :

21ns

Product Type :

MOSFET

Operating Temperature :

-55°C~175°C TJ

Type :

PolarHT Power MOSFET HiPerFET

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

21.46mm

Power Dissipation-Max (Abs) :

480 W

Transistor Polarity :

N-Channel

Number of Elements per Chip :

1

Mounting Style :

Through Hole

Mount :

Through Hole

Published :

2006

FET Type :

N-Channel

Length :

16.26mm

Packaging :

Box

Power Dissipation (Max) :

480W (Tc)

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Package / Case :

TO-247-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Tradename :

HiPerFET

Manufacturer :

IXYS

Lead Free :

Lead Free

Series :

PolarHT™ HiPerFET™

Vgs(th) (Max) @ Id :

5V @ 4mA

Fall Time (Typ) :

21 ns

Brand :

IXYS

Number of Channels :

1 Channel

Turn-Off Delay Time :

60 ns

Terminal Position :

Single

Resistance :

34mOhm

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Product Status :

Active

Number of Terminals :

3

Mounting Type :

Through Hole

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Product Category :

MOSFET

Configuration :

Single

Rds On (Max) @ Id, Vgs :

34m Ω @ 37A, 10V

Continuous Drain Current (ID) :

74A

Maximum Operating Temperature :

+175 °C

Drain-source On Resistance-Max :

0.034 Ω

Drain Current-Max (Abs) (ID) :

74 A

Pulsed Drain Current-Max (IDM) :

200A

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e1

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

1000 mJ

Package :

Box

Factory Lead Time :

30 Weeks

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Minimum Operating Temperature :

-55 °C

Base Product Number :

IXFH74

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)