IXFH6N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Mounting Style :

Through Hole

Vgs (Max) :

±30V

Length :

16.26 mm

Terminal Form :

THROUGH-HOLE

Input Capacitance :

2.83 nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Compliant

Polarity/Channel Type :

N-Channel

Factory Lead Time :

30 Weeks

Pulsed Drain Current-Max (IDM) :

18A

Number of Terminals :

3

Product Category :

MOSFET

Published :

2011

Minimum Operating Temperature :

- 55 C

Rds On Max :

2.4 Ω

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Power Dissipation-Max :

250W Tc

Current - Continuous Drain (Id) @ 25°C :

6A Tc

JEDEC-95 Code :

TO-247

Terminal Position :

Single

Channel Mode :

Enhancement

Base Product Number :

IXFH6

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

1200V

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-247AD (IXFH)

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Package :

Tube

JESD-609 Code :

e1

Product Status :

Active

Power Dissipation-Max (Abs) :

250 W

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Feature :

--

Rise Time :

11 ns

Mount :

Through Hole

Width :

5.3 mm

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

300 mJ

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 500mA, 10V

Drain to Source Voltage (Vdss) :

1200V

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Brand :

IXYS

Drain Current-Max (Abs) (ID) :

6A

Transistor Type :

1 N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Qualification Status :

Not Qualified

Max Power Dissipation :

250 W

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

5V @ 1mA

Drain-source On Resistance-Max :

0.0024Ohm

JESD-30 Code :

R-PSFM-T3

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Type :

Polar HiPerFET Power MOSFET

Power Dissipation (Max) :

250W (Tc)

FET Type :

N-Channel

Height :

21.46 mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HiPerFET™, PolarP2™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Transistor Application :

SWITCHING

Packaging :

Tube

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

6A

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V