IXFH50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

200V

JEDEC-95 Code :

TO-247

Package :

Tube

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Surface Mount :

No

Terminal Position :

Single

Power Dissipation :

300W

Reach Compliance Code :

Compliant

Length :

16.26 mm

FET Feature :

--

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

50A

Maximum Operating Temperature :

+ 150 C

Recovery Time :

200 ns

Pin Count :

3

Base Product Number :

IXFH50

ECCN Code :

EAR99

Vgs (Max) :

±20V

Height :

21.46 mm

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.045 Ω

Qualification Status :

Not Qualified

REACH SVHC :

No SVHC

Product Category :

MOSFET

Mount :

Through Hole

Package Shape :

RECTANGULAR

Number of Terminals :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Pins :

3

Turn-Off Delay Time :

72 ns

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Rise Time :

15ns

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation-Max (Abs) :

300 W

Drain to Source Breakdown Voltage :

200V

Transistor Application :

SWITCHING

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Fall Time (Typ) :

16 ns

Brand :

IXYS

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Vgs(th) (Max) @ Id :

4V @ 4mA

Factory Lead Time :

8 Weeks

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Supplier Device Package :

TO-247AD (IXFH)

Voltage - Rated DC :

200V

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Case Connection :

DRAIN

Series :

HiPerFET™

JESD-609 Code :

e1

Width :

5.3 mm

Threshold Voltage :

4V

Published :

2000

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Power Dissipation-Max :

300W Tc

Configuration :

Single

Product Status :

Not For New Designs

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200 V

Drain Current-Max (Abs) (ID) :

50 A

Packaging :

Tube

Power Dissipation Ambient-Max :

300 W

FET Type :

N-Channel

Radiation Hardening :

No

Pbfree Code :

yes

Resistance :

45mOhm

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Tradename :

HyperFET

Current Rating :

50A

RoHS :

Details

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V