IXFH40N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

JEDEC-95 Code :

TO-247

Supplier Device Package :

TO-247AD (IXFH)

Power Dissipation Ambient-Max :

300 W

JESD-30 Code :

R-PSFM-T3

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Height :

21.46 mm

Number of Terminations :

3

Vgs (Max) :

±20V

Mount :

Through Hole

REACH SVHC :

No SVHC

Tradename :

HyperFET

Recovery Time :

200 ns

Mounting Type :

Through Hole

Rise Time :

60ns

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

85mOhm

Manufacturer :

IXYS

Package / Case :

TO-247-3

Power Dissipation-Max :

300W Tc

Reach Compliance Code :

Compliant

Lead Free :

Lead Free

Packaging :

Tube

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

Fall Time (Typ) :

45 ns

Nominal Vgs :

4 V

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

300 V

Number of Channels :

1 Channel

Current Rating :

40A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Published :

2000

Pin Count :

3

Package :

Tube

Turn-Off Delay Time :

75 ns

Dual Supply Voltage :

300V

Width :

5.3 mm

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Channel Mode :

Enhancement

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Power Dissipation :

300W

Power Dissipation-Max (Abs) :

300 W

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Length :

16.26 mm

Number of Elements :

1

FET Type :

N-Channel

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.085 Ω

Voltage - Rated DC :

300V

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

160 A

FET Feature :

--

Drain to Source Voltage (Vdss) :

300V

Base Product Number :

IXFH40

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Series :

HiPerFET™

Continuous Drain Current (ID) :

40A

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

40 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Transistor Element Material :

SILICON

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

300V

Power Dissipation (Max) :

300W (Tc)

Rds On (Max) @ Id, Vgs :

85m Ω @ 500mA, 10V

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Brand :

IXYS

Product Type :

MOSFET

Case Connection :

DRAIN

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 4mA