IXFH35N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation Ambient-Max :

300 W

Package :

Tube

Transistor Element Material :

SILICON

RoHS :

Details

Current Rating :

35A

Package / Case :

TO-247-3

Base Product Number :

IXFH35

Vgs (Max) :

±20V

Number of Terminals :

3

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Series :

HiPerFET™

Mounting Style :

Through Hole

Configuration :

Single

Qualification Status :

Not Qualified

Surface Mount :

No

Pbfree Code :

yes

Channel Mode :

Enhancement

Element Configuration :

Single

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Continuous Drain Current (ID) :

35A

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Voltage - Rated DC :

300V

Height :

21.46 mm

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-247AD (IXFH)

Terminal Position :

Single

DS Breakdown Voltage-Min :

300 V

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

35 A

FET Type :

N-Channel

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

100m Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

4V @ 4mA

FET Feature :

--

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

140A

Power Dissipation :

300W

Packaging :

Tube

Width :

5.3 mm

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Moisture Sensitivity Level (MSL) :

Not Applicable

Published :

2000

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Brand :

IXYS

JEDEC-95 Code :

TO-247AD

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Number of Terminations :

3

Transistor Type :

1 N-Channel

Rise Time :

60ns

Power Dissipation-Max :

300W Tc

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

300V

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS

Power Dissipation-Max (Abs) :

300 W

Power Dissipation (Max) :

300W (Tc)

Number of Channels :

1 Channel

Turn-Off Delay Time :

75 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

45 ns

Pin Count :

3

Length :

16.26 mm

Drain-source On Resistance-Max :

0.1Ohm

Number of Pins :

3

Tradename :

HyperFET

Mount :

Through Hole

Drain to Source Breakdown Voltage :

300V

Product Status :

Obsolete