IXFH26N50P
- Mfr.Part #
- IXFH26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO247AD
- Stock
- 4,579
- In Stock :
- 4,579
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- FET Feature :
- --
- Published :
- 2006
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 78A
- Width :
- 5.3mm
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 26A
- Factory Lead Time :
- 30 Weeks
- Resistance :
- 230mOhm
- Turn-Off Delay Time :
- 58 ns
- JEDEC-95 Code :
- TO-247AD
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 400W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- +150 °C
- Reach Compliance Code :
- Compliant
- Length :
- 16.26mm
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- FET Type :
- N-Channel
- Number of Elements per Chip :
- 1
- Power Dissipation :
- 400W
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-247-3
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 20 ns
- Package Type :
- TO-247
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation (Max) :
- 400W (Tc)
- Supplier Device Package :
- TO-247AD (IXFH)
- Minimum Operating Temperature :
- -55 °C
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HiPerFET™, PolarHT™
- Continuous Drain Current Id :
- 26A
- Rise Time :
- 25ns
- Package :
- Tube
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 26A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 20 ns
- Qualification :
- -
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Channel Type :
- N
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- RoHS :
- Details
- Tradename :
- HiPerFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Channels :
- 1 Channel
- Voltage - Rated DC :
- 500V
- Number of Elements :
- 1
- Base Product Number :
- IXFH26
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Height :
- 21.46mm
- Subcategory :
- MOSFETs
- Pin Count :
- 3
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Datasheets
- IXFH26N50P

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-247-3
IXFH26N50P Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH26N50P Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXFH26N50P Applications
There are a lot of IXYS
IXFH26N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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