IXFH26N50P
- Mfr.Part #
- IXFH26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A TO247AD
- Stock
- 4,579
- In Stock :
- 4,579
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFH26
- Power Dissipation (Max) :
- 400W (Tc)
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- Number of Elements per Chip :
- 1
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Number of Elements :
- 1
- Published :
- 2006
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Reach Compliance Code :
- Compliant
- Current Rating :
- 26A
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 500V
- Subcategory :
- MOSFETs
- Power Dissipation :
- 400W
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Channel Type :
- N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 20 ns
- Package :
- Tube
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Continuous Drain Current Id :
- 26A
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™, PolarHT™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-247AD
- Supplier Device Package :
- TO-247AD (IXFH)
- Mount :
- Through Hole
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Length :
- 16.26mm
- Factory Lead Time :
- 30 Weeks
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Qualification :
- -
- Product Type :
- MOSFET
- RoHS :
- Details
- Resistance :
- 230mOhm
- Vgs (Max) :
- ±30V
- Maximum Operating Temperature :
- +150 °C
- Pin Count :
- 3
- Element Configuration :
- Single
- Package Type :
- TO-247
- Additional Feature :
- AVALANCHE RATED
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Height :
- 21.46mm
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 400W Tc
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 58 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 500V
- Turn On Delay Time :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- -55 °C
- Width :
- 5.3mm
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- JESD-609 Code :
- e1
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 78A
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 26A
- Package / Case :
- TO-247-3
- Rise Time :
- 25ns
- Datasheets
- IXFH26N50P
IXFH26N50P Documents

N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-247-3
IXFH26N50P Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH26N50P Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXFH26N50P Applications
There are a lot of IXYS
IXFH26N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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