IXFH26N50P

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Mfr.Part #
IXFH26N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 26A TO247AD
Stock
4,579
In Stock :
4,579

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Qualification Status :
Not Qualified
Base Product Number :
IXFH26
Power Dissipation (Max) :
400W (Tc)
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Number of Terminations :
3
Number of Elements per Chip :
1
Case Connection :
DRAIN
Brand :
IXYS
Number of Elements :
1
Published :
2006
Tradename :
HiPerFET
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Reach Compliance Code :
Compliant
Current Rating :
26A
Operating Mode :
ENHANCEMENT MODE
Voltage - Rated DC :
500V
Subcategory :
MOSFETs
Power Dissipation :
400W
Number of Channels :
1 Channel
Packaging :
Tube
Channel Type :
N
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
20 ns
Package :
Tube
FET Type :
N-Channel
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Continuous Drain Current Id :
26A
Transistor Polarity :
N-Channel
Series :
HiPerFET™, PolarHT™
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-247AD
Supplier Device Package :
TO-247AD (IXFH)
Mount :
Through Hole
FET Feature :
--
Gate to Source Voltage (Vgs) :
30V
Length :
16.26mm
Factory Lead Time :
30 Weeks
Rds On (Max) @ Id, Vgs :
230m Ω @ 13A, 10V
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Qualification :
-
Product Type :
MOSFET
RoHS :
Details
Resistance :
230mOhm
Vgs (Max) :
±30V
Maximum Operating Temperature :
+150 °C
Pin Count :
3
Element Configuration :
Single
Package Type :
TO-247
Additional Feature :
AVALANCHE RATED
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Height :
21.46mm
Lead Free :
Lead Free
Power Dissipation-Max :
400W Tc
Mounting Type :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Channel Mode :
Enhancement
Turn-Off Delay Time :
58 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
Drain to Source Voltage (Vdss) :
500V
Turn On Delay Time :
20 ns
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
-55 °C
Width :
5.3mm
Pbfree Code :
yes
Mounting Style :
Through Hole
JESD-609 Code :
e1
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
78A
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
26A
Package / Case :
TO-247-3
Rise Time :
25ns
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXFH26N50P pinout, IXFH26N50P datasheet PDF, IXFH26N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH26N50P


N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-247-3

IXFH26N50P Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH26N50P Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)


IXFH26N50P Applications


There are a lot of IXYS
IXFH26N50P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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