IXFH26N50P

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Mfr.Part #
IXFH26N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 26A TO247AD
Stock
4,579
In Stock :
4,579

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
5.3mm
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Product Type :
MOSFET
Power Dissipation :
400W
Configuration :
Single
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Length :
16.26mm
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
-55 °C
Product Status :
Active
FET Feature :
--
Channel Mode :
Enhancement
JESD-609 Code :
e1
Subcategory :
MOSFETs
Case Connection :
DRAIN
Factory Lead Time :
30 Weeks
Turn-Off Delay Time :
58 ns
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Rise Time :
25ns
Supplier Device Package :
TO-247AD (IXFH)
Height :
21.46mm
Number of Elements :
1
Drain to Source Breakdown Voltage :
500V
Current Rating :
26A
Power Dissipation (Max) :
400W (Tc)
Package Type :
TO-247
FET Type :
N-Channel
Series :
HiPerFET™, PolarHT™
Product Category :
MOSFET
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Published :
2006
Tradename :
HiPerFET
Pin Count :
3
Brand :
IXYS
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Packaging :
Tube
Channel Type :
N
Pbfree Code :
yes
Package :
Tube
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-247-3
Qualification :
-
RoHS :
Details
Element Configuration :
Single
Maximum Operating Temperature :
+150 °C
Number of Pins :
3
Mounting Style :
Through Hole
Turn On Delay Time :
20 ns
Drain to Source Voltage (Vdss) :
500V
Power Dissipation-Max :
400W Tc
Voltage - Rated DC :
500V
RoHS Status :
ROHS3 Compliant
Resistance :
230mOhm
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Fall Time (Typ) :
20 ns
Rds On (Max) @ Id, Vgs :
230m Ω @ 13A, 10V
JEDEC-95 Code :
TO-247AD
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
26A
Number of Channels :
1 Channel
Base Product Number :
IXFH26
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current Id :
26A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
78A
Number of Elements per Chip :
1
Transistor Polarity :
N-Channel
Datasheets
IXFH26N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Number of Channels:1 Channel, IXFH26N50P pinout, IXFH26N50P datasheet PDF, IXFH26N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH26N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH26N50P


N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 60nC @ 10V 500V TO-247-3

IXFH26N50P Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3600pF @ 25V.This device conducts a continuous drain current (ID) of 26A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 78A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH26N50P Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)


IXFH26N50P Applications


There are a lot of IXYS
IXFH26N50P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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