IXFH22N60P

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Mfr.Part #
IXFH22N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO247AD
Stock
12,013
In Stock :
12,013

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
1000 mJ
Turn-Off Delay Time :
60 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
600V
Reach Compliance Code :
Compliant
Vgs (Max) :
±30V
Power Dissipation (Max) :
400W (Tc)
Package / Case :
TO-247-3
Surface Mount :
No
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Type :
PolarHV HiPerFET Power MOSFET
Max Junction Temperature (Tj) :
150°C
FET Type :
N-Channel
Mounting Type :
Through Hole
Pin Count :
3
Power Dissipation-Max :
400W Tc
Drain to Source Voltage (Vdss) :
600V
Number of Pins :
3
Transistor Polarity :
N-Channel
Package :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
5.3 mm
Published :
2006
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.35 Ω
Channel Mode :
Enhancement
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Rise Time :
20ns
DS Breakdown Voltage-Min :
600 V
Height :
25.96mm
Element Configuration :
Single
Pbfree Code :
yes
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Threshold Voltage :
5.5V
Packaging :
Tube
JESD-609 Code :
e1
Transistor Element Material :
SILICON
Supplier Device Package :
TO-247AD (IXFH)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Tradename :
HiPerFET
Power Dissipation :
400W
Base Product Number :
IXFH22
Lead Free :
Lead Free
FET Feature :
--
Length :
16.26 mm
JEDEC-95 Code :
TO-247AD
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Mount :
Through Hole
RoHS :
Details
Number of Channels :
1
Case Connection :
DRAIN
Mounting Style :
Through Hole
Configuration :
Single
Series :
HiPerFET™, PolarHT™
Current Rating :
22A
Terminal Form :
THROUGH-HOLE
Fall Time (Typ) :
23 ns
Voltage - Rated DC :
600V
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSFM-T3
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Subcategory :
MOSFETs
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Transistor Application :
SWITCHING
Brand :
IXYS
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
30 Weeks
Number of Terminations :
3
Continuous Drain Current (ID) :
22A
Pulsed Drain Current-Max (IDM) :
66A
Turn On Delay Time :
20 ns
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Datasheets
IXFH22N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Type:PolarHV HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFH22N60P pinout, IXFH22N60P datasheet PDF, IXFH22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-247-3

IXFH22N60P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFH22N60P Applications


There are a lot of IXYS
IXFH22N60P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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