IXFH22N60P

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Mfr.Part #
IXFH22N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO247AD
Stock
12,013
In Stock :
12,013

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarHT™
Mount :
Through Hole
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Number of Channels :
1
Power Dissipation-Max :
400W Tc
JESD-609 Code :
e1
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Number of Terminals :
3
Transistor Element Material :
SILICON
Terminal Position :
Single
Published :
2006
Subcategory :
MOSFETs
Channel Mode :
Enhancement
Element Configuration :
Single
Package :
Tube
Power Dissipation :
400W
FET Type :
N-Channel
DS Breakdown Voltage-Min :
600 V
Length :
16.26 mm
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Number of Terminations :
3
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
22A
Drain to Source Voltage (Vdss) :
600V
Base Product Number :
IXFH22
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Case Connection :
DRAIN
Threshold Voltage :
5.5V
Avalanche Energy Rating (Eas) :
1000 mJ
Pulsed Drain Current-Max (IDM) :
66A
Turn-Off Delay Time :
60 ns
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Product Status :
Active
Vgs (Max) :
±30V
Power Dissipation (Max) :
400W (Tc)
Manufacturer :
IXYS
RoHS :
Details
Mounting Type :
Through Hole
Voltage - Rated DC :
600V
Type :
PolarHV HiPerFET Power MOSFET
Fall Time (Typ) :
23 ns
RoHS Status :
ROHS3 Compliant
Tradename :
HiPerFET
Number of Pins :
3
Pin Count :
3
Minimum Operating Temperature :
- 55 C
Drain to Source Breakdown Voltage :
600V
Width :
5.3 mm
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Configuration :
Single
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.35 Ω
Vgs(th) (Max) @ Id :
5.5V @ 4mA
JEDEC-95 Code :
TO-247AD
ECCN Code :
EAR99
Factory Lead Time :
30 Weeks
Transistor Type :
1 N-Channel
Brand :
IXYS
Supplier Device Package :
TO-247AD (IXFH)
Rise Time :
20ns
Current Rating :
22A
Transistor Polarity :
N-Channel
Surface Mount :
No
Turn On Delay Time :
20 ns
Package Shape :
RECTANGULAR
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Number of Elements :
1
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Height :
25.96mm
Package / Case :
TO-247-3
Max Junction Temperature (Tj) :
150°C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Type:PolarHV HiPerFET Power MOSFET, Number of Pins:3, Package / Case:TO-247-3, IXFH22N60P pinout, IXFH22N60P datasheet PDF, IXFH22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V TO-247-3

IXFH22N60P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXFH22N60P Applications


There are a lot of IXYS
IXFH22N60P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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