IXFH22N55

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Power Dissipation Ambient-Max :

300 W

Rds On (Max) @ Id, Vgs :

270m Ω @ 11A, 10V

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

88A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Base Product Number :

IXFH22

Manufacturer :

IXYS Corporation

Product Status :

Obsolete

Moisture Sensitivity Level (MSL) :

Not Applicable

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Rise Time :

43ns

Supplier Device Package :

TO-247AD (IXFH)

Drain to Source Voltage (Vdss) :

550V

FET Feature :

--

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Fall Time (Typ) :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

300 W

Power Dissipation :

300W

JEDEC-95 Code :

TO-247

Turn-Off Delay Time :

70 ns

Voltage - Rated DC :

550V

Power Dissipation (Max) :

300W (Tc)

Case Connection :

DRAIN

Surface Mount :

No

Package :

Tube

Terminal Position :

Single

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

22 A

Pin Count :

3

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Published :

2000

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Number of Elements :

1

Turn On Time-Max (ton) :

100ns

Power Dissipation-Max :

300W Tc

DS Breakdown Voltage-Min :

550 V

Reach Compliance Code :

Compliant

Current Rating :

22A

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Turn Off Time-Max (toff) :

150ns

Series :

HiPerFET™

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

22A

Pbfree Code :

yes

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

550V

Transistor Element Material :

SILICON

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.27Ohm

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED