IXFH21N50F
- Mfr.Part #
- IXFH21N50F
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 21A TO247
- Stock
- 16,774
- In Stock :
- 16,774
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-247
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300W
- Channel Mode :
- Enhancement
- Drain Current-Max (Abs) (ID) :
- 21 A
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 10.5A, 10V
- Series :
- HiPerRF™
- Fall Time (Typ) :
- 7.7 ns
- Transistor Type :
- 1 N-Channel
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 84A
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- Maximum Operating Temperature :
- + 150 C
- DS Breakdown Voltage-Min :
- 500 V
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Number of Elements :
- 1
- Height :
- 21.46 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Drain-source On Resistance-Max :
- 0.25Ohm
- Length :
- 16.26 mm
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFH21
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- FET Feature :
- --
- Pbfree Code :
- yes
- Power Dissipation-Max (Abs) :
- 300 W
- Width :
- 5.3 mm
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 10 Weeks
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 21A
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-247 (IXFH)
- Turn-Off Delay Time :
- 36 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Rise Time :
- 12ns
- Package :
- Tube
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Datasheets
- IXFH21N50F

N-Channel Tube 250m Ω @ 10.5A, 10V ±20V 2600pF @ 25V 77nC @ 10V 500V TO-247-3
IXFH21N50F Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [21A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 21 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.A maximum pulsed drain current of 84A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH21N50F Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 84A.
a 500V drain to source voltage (Vdss)
IXFH21N50F Applications
There are a lot of IXYS
IXFH21N50F applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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