IXFH21N50F

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Mfr.Part #
IXFH21N50F
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 21A TO247
Stock
16,774
In Stock :
16,774

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-247
Package Shape :
RECTANGULAR
Number of Pins :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position :
Single
Transistor Element Material :
SILICON
Power Dissipation :
300W
Channel Mode :
Enhancement
Drain Current-Max (Abs) (ID) :
21 A
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
300W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
300W (Tc)
Terminal Form :
THROUGH-HOLE
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
250m Ω @ 10.5A, 10V
Series :
HiPerRF™
Fall Time (Typ) :
7.7 ns
Transistor Type :
1 N-Channel
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
500V
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
84A
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Maximum Operating Temperature :
+ 150 C
DS Breakdown Voltage-Min :
500 V
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Number of Elements :
1
Height :
21.46 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
0.25Ohm
Length :
16.26 mm
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
Base Product Number :
IXFH21
Brand :
IXYS
Avalanche Energy Rating (Eas) :
1500 mJ
Product Type :
MOSFET
FET Type :
N-Channel
JESD-609 Code :
e1
RoHS Status :
RoHS Compliant
Packaging :
Tube
FET Feature :
--
Pbfree Code :
yes
Power Dissipation-Max (Abs) :
300 W
Width :
5.3 mm
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Drain to Source Voltage (Vdss) :
500V
Vgs (Max) :
±20V
Factory Lead Time :
10 Weeks
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
21A
RoHS :
Details
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2002
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
Through Hole
Supplier Device Package :
TO-247 (IXFH)
Turn-Off Delay Time :
36 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Obsolete
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-247-3
Pin Count :
3
Mounting Type :
Through Hole
Rise Time :
12ns
Package :
Tube
Element Configuration :
Single
Reach Compliance Code :
Compliant
Datasheets
IXFH21N50F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH21N50F from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, IXFH21N50F pinout, IXFH21N50F datasheet PDF, IXFH21N50F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH21N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH21N50F


N-Channel Tube 250m Ω @ 10.5A, 10V ±20V 2600pF @ 25V 77nC @ 10V 500V TO-247-3

IXFH21N50F Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [21A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 21 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.A maximum pulsed drain current of 84A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH21N50F Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 84A.
a 500V drain to source voltage (Vdss)


IXFH21N50F Applications


There are a lot of IXYS
IXFH21N50F applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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