IXFH16N80P

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Mfr.Part #
IXFH16N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 16A TO247AD
Stock
44,535
In Stock :
44,535

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Subcategory :
MOSFETs
ECCN Code :
EAR99
FET Feature :
--
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Packaging :
Tube
Vgs (Max) :
±30V
Mounting Type :
Through Hole
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Series :
HiPerFET™, PolarHT™
Package :
Tube
Drain-source On Resistance-Max :
0.6 Ω
Mounting Style :
Through Hole
MSL :
-
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current Id :
16A
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
800V
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
600m Ω @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Continuous Drain Current (ID) :
16A
Configuration :
Single
Power Dissipation :
460W
Radiation Hardening :
No
JESD-609 Code :
e1
Transistor Type :
1 N-Channel
Length :
16.26 mm
Pbfree Code :
yes
Height :
21.46 mm
Base Product Number :
IXFH16
Supplier Device Package :
TO-247AD (IXFH)
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
Product Type :
MOSFET
Drain to Source Breakdown Voltage :
800V
Power Dissipation (Max) :
460W (Tc)
Threshold Voltage :
5V
Manufacturer :
IXYS
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Number of Terminals :
3
Package / Case :
TO-247-3
Package Shape :
RECTANGULAR
Power Dissipation-Max :
460W Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
5.3 mm
Number of Terminations :
3
Fall Time (Typ) :
29 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 10V
Qualification :
-
Reach Compliance Code :
Compliant
Published :
2006
Rise Time :
32ns
Tradename :
HiPerFET
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Turn-Off Delay Time :
75 ns
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Type :
PolarHV Power MOSFET
Number of Pins :
3
Product Status :
Active
Channel Type :
N Channel
Avalanche Energy Rating (Eas) :
1000 mJ
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 4mA
Resistance :
600mOhm
DS Breakdown Voltage-Min :
800 V
Channel Mode :
Enhancement
Factory Lead Time :
30 Weeks
REACH SVHC :
No SVHC
JEDEC-95 Code :
TO-247AD
Surface Mount :
No
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Minimum Operating Temperature :
- 55 C
Datasheets
IXFH16N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Type:PolarHV Power MOSFET, Number of Pins:3, IXFH16N80P pinout, IXFH16N80P datasheet PDF, IXFH16N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH16N80P


N-Channel Tube 600m Ω @ 500mA, 10V ±30V 4600pF @ 25V 71nC @ 10V 800V TO-247-3

IXFH16N80P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 4600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH16N80P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)


IXFH16N80P Applications


There are a lot of IXYS
IXFH16N80P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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