IXFH16N80P
- Mfr.Part #
- IXFH16N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 16A TO247AD
- Stock
- 44,535
- In Stock :
- 44,535
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- ECCN Code :
- EAR99
- FET Feature :
- --
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™, PolarHT™
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.6 Ω
- Mounting Style :
- Through Hole
- MSL :
- -
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current Id :
- 16A
- Number of Channels :
- 1 Channel
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 800V
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Continuous Drain Current (ID) :
- 16A
- Configuration :
- Single
- Power Dissipation :
- 460W
- Radiation Hardening :
- No
- JESD-609 Code :
- e1
- Transistor Type :
- 1 N-Channel
- Length :
- 16.26 mm
- Pbfree Code :
- yes
- Height :
- 21.46 mm
- Base Product Number :
- IXFH16
- Supplier Device Package :
- TO-247AD (IXFH)
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- 800V
- Power Dissipation (Max) :
- 460W (Tc)
- Threshold Voltage :
- 5V
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Package / Case :
- TO-247-3
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 460W Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Width :
- 5.3 mm
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 29 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Qualification :
- -
- Reach Compliance Code :
- Compliant
- Published :
- 2006
- Rise Time :
- 32ns
- Tradename :
- HiPerFET
- Terminal Form :
- THROUGH-HOLE
- Pin Count :
- 3
- Turn-Off Delay Time :
- 75 ns
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Type :
- PolarHV Power MOSFET
- Number of Pins :
- 3
- Product Status :
- Active
- Channel Type :
- N Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Resistance :
- 600mOhm
- DS Breakdown Voltage-Min :
- 800 V
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 30 Weeks
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-247AD
- Surface Mount :
- No
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXFH16N80P

N-Channel Tube 600m Ω @ 500mA, 10V ±30V 4600pF @ 25V 71nC @ 10V 800V TO-247-3
IXFH16N80P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 4600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH16N80P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)
IXFH16N80P Applications
There are a lot of IXYS
IXFH16N80P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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