IXFH16N120P
- Mfr.Part #
- IXFH16N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 16A TO247AD
- Stock
- 641
- In Stock :
- 641
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HiPerFET™, PolarP2™
- Package :
- Tube
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 1200 V
- Continuous Drain Current (ID) :
- 16A
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±30V
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.95Ohm
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 5.3 mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- N-Channel
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 1200V
- Number of Terminals :
- 3
- Drain Current-Max (Abs) (ID) :
- 16 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 35A
- JEDEC-95 Code :
- TO-247AD
- Pin Count :
- 3
- Number of Terminations :
- 3
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- Power Dissipation-Max (Abs) :
- 660 W
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 1.2kV
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Power Dissipation :
- 660W
- Fall Time (Typ) :
- 35 ns
- Pbfree Code :
- yes
- Length :
- 16.26 mm
- Manufacturer :
- IXYS
- Published :
- 2012
- Power Dissipation-Max :
- 660W Tc
- Packaging :
- Tube
- Factory Lead Time :
- 30 Weeks
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Base Product Number :
- IXFH16
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 800 mJ
- RoHS :
- Details
- Turn-Off Delay Time :
- 66 ns
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Height :
- 21.46 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 28ns
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-247AD (IXFH)
- Power Dissipation (Max) :
- 660W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 8A, 10V
- Tradename :
- HiPerFET
- Datasheets
- IXFH16N120P

N-Channel Tube 950m Ω @ 8A, 10V ±30V 6900pF @ 25V 120nC @ 10V 1200V TO-247-3
IXFH16N120P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.In this device, the drain-source breakdown voltage is 1.2kV and VGS=1.2kV, so the drain-source breakdown voltage is 1.2kV in this case.A device can conduct a maximum continuous current of [16 A] according to its drain current.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 35A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 1200 V to maintain normal operation.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFH16N120P Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 35A.
a 1200V drain to source voltage (Vdss)
IXFH16N120P Applications
There are a lot of IXYS
IXFH16N120P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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