IXFH16N120P

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Mfr.Part #
IXFH16N120P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1200V 16A TO247AD
Stock
641
In Stock :
641

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Series :
HiPerFET™, PolarP2™
Package :
Tube
Package / Case :
TO-247-3
Number of Elements :
1
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
1200 V
Continuous Drain Current (ID) :
16A
Gate to Source Voltage (Vgs) :
30V
Mounting Style :
Through Hole
Vgs (Max) :
±30V
Terminal Position :
Single
Drain-source On Resistance-Max :
0.95Ohm
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
5.3 mm
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Surface Mount :
No
Drain to Source Voltage (Vdss) :
1200V
Number of Terminals :
3
Drain Current-Max (Abs) (ID) :
16 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
35A
JEDEC-95 Code :
TO-247AD
Pin Count :
3
Number of Terminations :
3
Product Type :
MOSFET
Number of Channels :
1 Channel
Power Dissipation-Max (Abs) :
660 W
Transistor Element Material :
SILICON
Radiation Hardening :
No
Configuration :
Single
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
1.2kV
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Terminal Form :
THROUGH-HOLE
JESD-609 Code :
e1
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Power Dissipation :
660W
Fall Time (Typ) :
35 ns
Pbfree Code :
yes
Length :
16.26 mm
Manufacturer :
IXYS
Published :
2012
Power Dissipation-Max :
660W Tc
Packaging :
Tube
Factory Lead Time :
30 Weeks
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Base Product Number :
IXFH16
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
800 mJ
RoHS :
Details
Turn-Off Delay Time :
66 ns
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
Height :
21.46 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
28ns
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation (Max) :
660W (Tc)
Additional Feature :
AVALANCHE RATED
Lead Free :
Lead Free
Mounting Type :
Through Hole
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
950m Ω @ 8A, 10V
Tradename :
HiPerFET
Datasheets
IXFH16N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFH16N120P pinout, IXFH16N120P datasheet PDF, IXFH16N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH16N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH16N120P


N-Channel Tube 950m Ω @ 8A, 10V ±30V 6900pF @ 25V 120nC @ 10V 1200V TO-247-3

IXFH16N120P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.In this device, the drain-source breakdown voltage is 1.2kV and VGS=1.2kV, so the drain-source breakdown voltage is 1.2kV in this case.A device can conduct a maximum continuous current of [16 A] according to its drain current.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 35A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 1200 V to maintain normal operation.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFH16N120P Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 35A.
a 1200V drain to source voltage (Vdss)


IXFH16N120P Applications


There are a lot of IXYS
IXFH16N120P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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