IXFH15N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Height :

21.46 mm

Drain Current-Max (Abs) (ID) :

15 A

Drain to Source Breakdown Voltage :

1kV

Product Type :

MOSFET

Brand :

IXYS

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Radiation Hardening :

No

Supplier Device Package :

TO-247AD (IXFH)

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Operating Mode :

ENHANCEMENT MODE

Length :

16.26 mm

Channel Mode :

Enhancement

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

1000 V

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-247

Additional Feature :

AVALANCHE RATED

Series :

HiPerFET™, PolarP2™

Published :

2008

Power Dissipation (Max) :

543W (Tc)

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Product Category :

MOSFET

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Mounting Style :

Through Hole

Product Status :

Active

Drain-source On Resistance-Max :

0.76 Ω

Power Dissipation-Max (Abs) :

543 W

Fall Time (Typ) :

58 ns

Surface Mount :

No

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

40A

Minimum Operating Temperature :

- 55 C

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

5140pF @ 25V

Power Dissipation-Max :

543W Tc

Gate to Source Voltage (Vgs) :

30V

Package :

Tube

Type :

Polar Power MOSFET HiPerFET

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e1

Case Connection :

DRAIN

Turn-Off Delay Time :

44 ns

Maximum Operating Temperature :

+ 150 C

Element Configuration :

Single

Tradename :

HiPerFET

Pbfree Code :

yes

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

15A

Terminal Position :

Single

Number of Terminals :

3

Rise Time :

44ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

30 Weeks

Pin Count :

3

Transistor Type :

1 N-Channel

FET Feature :

--

Manufacturer :

IXYS

Avalanche Energy Rating (Eas) :

500 mJ

Drain to Source Voltage (Vdss) :

1000V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

760mOhm

Package Shape :

RECTANGULAR

Base Product Number :

IXFH15

Packaging :

Tube

Lead Free :

Lead Free

Number of Terminations :

3

Configuration :

Single

Transistor Element Material :

SILICON

Width :

5.3 mm

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Power Dissipation :

543W

Rds On (Max) @ Id, Vgs :

760m Ω @ 500mA, 10V