IXFH13N50
- Mfr.Part #
- IXFH13N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 13A TO247AD
- Stock
- 2,194
- In Stock :
- 2,194
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 76 ns
- Power Dissipation (Max) :
- 180W (Tc)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain Current-Max (Abs) (ID) :
- 13 A
- Supplier Device Package :
- TO-247AD (IXFH)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Power Dissipation :
- 180W
- Number of Terminals :
- 3
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 32 ns
- Power Dissipation-Max (Abs) :
- 180 W
- Pulsed Drain Current-Max (IDM) :
- 52A
- Published :
- 2000
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Obsolete
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation Ambient-Max :
- 180 W
- Base Product Number :
- IXFH13
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 6.5A, 10V
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Series :
- HiPerFET™
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Terminal Form :
- THROUGH-HOLE
- Current Rating :
- 13A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS Corporation
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 500V
- Drain-source On Resistance-Max :
- 0.4Ohm
- Drain to Source Voltage (Vdss) :
- 500V
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 13A
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Surface Mount :
- No
- Rise Time :
- 27ns
- DS Breakdown Voltage-Min :
- 500 V
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247
- Power Dissipation-Max :
- 180W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Datasheets
- IXFH13N50

N-Channel Tube 400m Ω @ 6.5A, 10V ±20V 2800pF @ 25V 120nC @ 10V 500V TO-247-3
IXFH13N50 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 13 A.As a result of its turn-off delay time, which is 76 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 52A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH13N50 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 52A.
a 500V drain to source voltage (Vdss)
IXFH13N50 Applications
There are a lot of IXYS
IXFH13N50 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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