IXFH12N50F
- Mfr.Part #
- IXFH12N50F
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO247
- Stock
- 12,799
- In Stock :
- 12,799
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS Corporation
- FET Feature :
- --
- Vgs (Max) :
- ±20V
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 8 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Power Dissipation-Max :
- 180W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Resistance :
- 400 mΩ
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Base Product Number :
- IXFH12
- JEDEC-95 Code :
- TO-247
- Rise Time :
- 14ns
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 180W (Tc)
- Power Dissipation :
- 180W
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 12A
- Operating Mode :
- ENHANCEMENT MODE
- Schedule B :
- 8541290080
- Series :
- HiPerRF™
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Resistance :
- 400mOhm
- Product Status :
- Obsolete
- Supplier Device Package :
- TO-247 (IXFH)
- DS Breakdown Voltage-Min :
- 500 V
- RoHS :
- Compliant
- Min Operating Temperature :
- -55 °C
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 48A
- Drain-source On Resistance-Max :
- 0.4 Ω
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1870pF @ 25V
- Max Power Dissipation :
- 180 W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 6A, 10V
- Surface Mount :
- No
- Pin Count :
- 3
- Element Configuration :
- Single
- Max Operating Temperature :
- 150 °C
- Reach Compliance Code :
- Compliant
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 500V
- Package Shape :
- RECTANGULAR
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 28 ns
- Datasheets
- IXFH12N50F

N-Channel Tube 400m Ω @ 6A, 10V ±20V 1870pF @ 25V 54nC @ 10V 500V TO-247-3
IXFH12N50F Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1870pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 48A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 400 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH12N50F Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 400 mΩ
a 500V drain to source voltage (Vdss)
IXFH12N50F Applications
There are a lot of IXYS
IXFH12N50F applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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