IXFH12N50F

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Mfr.Part #
IXFH12N50F
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 12A TO247
Stock
12,799
In Stock :
12,799

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS Corporation
FET Feature :
--
Vgs (Max) :
±20V
Number of Terminals :
3
Fall Time (Typ) :
8 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Number of Elements :
1
Power Dissipation-Max :
180W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Resistance :
400 mΩ
Avalanche Energy Rating (Eas) :
300 mJ
Base Product Number :
IXFH12
JEDEC-95 Code :
TO-247
Rise Time :
14ns
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Mounting Type :
Through Hole
Power Dissipation (Max) :
180W (Tc)
Power Dissipation :
180W
Current - Continuous Drain (Id) @ 25°C :
12A Tc
JESD-609 Code :
e1
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Continuous Drain Current (ID) :
12A
Operating Mode :
ENHANCEMENT MODE
Schedule B :
8541290080
Series :
HiPerRF™
Drain to Source Voltage (Vdss) :
500V
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Resistance :
400mOhm
Product Status :
Obsolete
Supplier Device Package :
TO-247 (IXFH)
DS Breakdown Voltage-Min :
500 V
RoHS :
Compliant
Min Operating Temperature :
-55 °C
Factory Lead Time :
10 Weeks
Number of Pins :
3
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-247-3
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
48A
Drain-source On Resistance-Max :
0.4 Ω
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
1870pF @ 25V
Max Power Dissipation :
180 W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rds On (Max) @ Id, Vgs :
400m Ω @ 6A, 10V
Surface Mount :
No
Pin Count :
3
Element Configuration :
Single
Max Operating Temperature :
150 °C
Reach Compliance Code :
Compliant
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
500V
Package Shape :
RECTANGULAR
Published :
2001
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Transistor Element Material :
SILICON
Turn-Off Delay Time :
28 ns
Datasheets
IXFH12N50F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N50F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, IXFH12N50F pinout, IXFH12N50F datasheet PDF, IXFH12N50F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH12N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH12N50F


N-Channel Tube 400m Ω @ 6A, 10V ±20V 1870pF @ 25V 54nC @ 10V 500V TO-247-3

IXFH12N50F Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1870pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 48A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 400 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH12N50F Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 400 mΩ
a 500V drain to source voltage (Vdss)


IXFH12N50F Applications


There are a lot of IXYS
IXFH12N50F applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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