IRLMS6802TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation :

2W

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

5.6A Ta

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Current Rating :

-5.6A

Turn On Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.1A, 4.5V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Nominal Vgs :

-1.2 V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Terminal Position :

Dual

Resistance :

100MOhm

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

Published :

2005

Rise Time :

33ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

72 ns

Voltage - Rated DC :

-20V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1079pF @ 10V

Length :

2.9972mm

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-23-6

Factory Lead Time :

12 Weeks

Vgs (Max) :

±12V

Width :

1.75mm

Power Dissipation-Max :

2W Ta

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

12 ns

Series :

HEXFET®

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

45A

Continuous Drain Current (ID) :

-5.6A

Number of Terminations :

6

Drain to Source Breakdown Voltage :

-20V

Dual Supply Voltage :

-20V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Height :

1.4478mm

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC