IRLML2060TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Vgs (Max) :

±16V

Rds On (Max) @ Id, Vgs :

480m Ω @ 1.2A, 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

64pF @ 25V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.25W Ta

Height :

1.016mm

Turn-Off Delay Time :

3.7 ns

Resistance :

480mOhm

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.67nC @ 4.5V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Recovery Time :

21 ns

Rise Time :

3.8ns

Turn On Delay Time :

4.9 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

2.8 ns

Number of Elements :

1

Threshold Voltage :

2.5V

Transistor Application :

SWITCHING

Number of Pins :

3

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Length :

3.0226mm

Transistor Element Material :

SILICON

Power Dissipation :

1.25W

Pulsed Drain Current-Max (IDM) :

4.8A

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Radiation Hardening :

No

Continuous Drain Current (ID) :

1.2A

Published :

2010

Series :

HEXFET®

Width :

1.397mm

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Number of Terminations :

3

Terminal Form :

Gull wing

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

16V

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant