IRLML2060TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Pulsed Drain Current-Max (IDM) :

4.8A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Power Dissipation-Max :

1.25W Ta

Turn On Delay Time :

4.9 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

16V

Published :

2010

Rise Time :

3.8ns

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

64pF @ 25V

Vgs (Max) :

±16V

Height :

1.016mm

Element Configuration :

Single

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Width :

1.397mm

Threshold Voltage :

2.5V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Fall Time (Typ) :

2.8 ns

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Recovery Time :

21 ns

Series :

HEXFET®

Power Dissipation :

1.25W

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Matte Tin (Sn)

Length :

3.0226mm

Continuous Drain Current (ID) :

1.2A

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

0.67nC @ 4.5V

Mount :

Surface Mount

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Pins :

3

Resistance :

480mOhm

Turn-Off Delay Time :

3.7 ns

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

480m Ω @ 1.2A, 10V

JESD-609 Code :

e3