IRLM220ATF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Element Configuration :

Single

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

Terminal Position :

Dual

Weight :

188mg

Factory Lead Time :

21 Weeks

Continuous Drain Current (ID) :

1.13A

Mount :

Surface Mount

Fall Time (Typ) :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Case Connection :

DRAIN

Turn-Off Delay Time :

6 ns

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

29 mJ

Operating Mode :

ENHANCEMENT MODE

Rise Time :

24ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Rds On (Max) @ Id, Vgs :

800m Ω @ 570mA, 5V

Current - Continuous Drain (Id) @ 25°C :

1.13A Ta

Power Dissipation :

2W

JESD-609 Code :

e3

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Pins :

4

Power Dissipation-Max :

2W Tc

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Turn On Delay Time :

6 ns

Pulsed Drain Current-Max (IDM) :

9A

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.8Ohm

Package / Case :

TO-261-4, TO-261AA