IRLML0030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Turn-Off Delay Time :

7.4 ns

Element Configuration :

Single

Published :

1998

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Rise Time :

4.4ns

Recovery Time :

17 ns

Power Dissipation-Max :

1.3W Ta

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Height :

1.12mm

Number of Terminations :

3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Max Junction Temperature (Tj) :

150°C

Width :

1.397mm

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Lead Free :

Lead Free

Series :

HEXFET®

Turn On Delay Time :

5.2 ns

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

1.7 V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Resistance :

27mOhm

Mount :

Surface Mount

Power Dissipation :

1.3W

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

27m Ω @ 5.2A, 10V

Vgs(th) (Max) @ Id :

2.3V @ 25μA

Fall Time (Typ) :

4.4 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

382pF @ 15V

Transistor Element Material :

SILICON

Length :

3.0226mm

Continuous Drain Current (ID) :

5.3A

Threshold Voltage :

1.7V

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta