IRLML0030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Resistance :

27mOhm

Power Dissipation :

1.3W

Turn On Delay Time :

5.2 ns

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.397mm

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

4.4 ns

Height :

1.12mm

Number of Elements :

1

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

5.3A

Vgs(th) (Max) @ Id :

2.3V @ 25μA

Rds On (Max) @ Id, Vgs :

27m Ω @ 5.2A, 10V

Power Dissipation-Max :

1.3W Ta

Max Junction Temperature (Tj) :

150°C

Additional Feature :

High Reliability

Turn-Off Delay Time :

7.4 ns

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

1.7V

Rise Time :

4.4ns

Input Capacitance (Ciss) (Max) @ Vds :

382pF @ 15V

Number of Channels :

1

Terminal Form :

Gull wing

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Recovery Time :

17 ns

Length :

3.0226mm

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

1.7 V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Element Configuration :

Single

Series :

HEXFET®

FET Type :

N-Channel

Published :

1998