IRLML2030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

3.3ns

Power Dissipation-Max :

1.3W Ta

Height :

1.016mm

Published :

2003

Fall Time (Typ) :

2.9 ns

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Transistor Element Material :

SILICON

Threshold Voltage :

1.7V

Nominal Vgs :

1.7 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

100MOhm

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

2.2A

Pulsed Drain Current-Max (IDM) :

11A

Number of Terminations :

3

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

14 ns

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.3V @ 25μA

FET Type :

N-Channel

Power Dissipation :

1.3W

Lead Free :

Lead Free

ECCN Code :

EAR99

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Continuous Drain Current (ID) :

2.7A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.0226mm

Number of Elements :

1

Turn-Off Delay Time :

4.5 ns

Width :

1.397mm

Transistor Application :

SWITCHING

Mount :

Surface Mount

Turn On Delay Time :

4.1 ns

Mounting Type :

Surface Mount