IRLML0060TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Terminations :

3

Lead Free :

Lead Free

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Width :

1.397mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Fall Time (Typ) :

4.2 ns

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

2.5V

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Terminal Position :

Dual

Turn-Off Delay Time :

6.8 ns

Nominal Vgs :

2.5 V

Rise Time :

6.3ns

Number of Channels :

1

ECCN Code :

EAR99

Turn On Delay Time :

5.4 ns

Rds On (Max) @ Id, Vgs :

92m Ω @ 2.7A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Length :

3.0226mm

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Number of Elements :

1

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

2.7A

Max Junction Temperature (Tj) :

150°C

Recovery Time :

21 ns

Resistance :

92mOhm

Published :

2009

Series :

HEXFET®

Power Dissipation-Max :

1.25W Ta

Operating Mode :

ENHANCEMENT MODE

Height :

1.12mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

1.25W

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ