IRLML2246TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

16 ns

Published :

2012

Length :

3.04mm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Transistor Application :

SWITCHING

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

135m Ω @ 2.6A, 4.5V

Lead Free :

Lead Free

Resistance :

236MOhm

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Recovery Time :

26 ns

Threshold Voltage :

-1.1V

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 16V

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Turn On Delay Time :

5.3 ns

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

26 ns

Width :

1.4mm

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

2.6A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

1.3W

Series :

HEXFET®

Terminal Form :

Gull wing

Number of Pins :

3

Nominal Vgs :

-1.1 V

Element Configuration :

Single

REACH SVHC :

No SVHC

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

7.7ns

Factory Lead Time :

12 Weeks

Height :

1.02mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.3W Ta

Drain to Source Breakdown Voltage :

-20V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.1V @ 10μA