IRLML2246TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Terminal Form :

Gull wing

Length :

3.04mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Width :

1.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5.3 ns

Rds On (Max) @ Id, Vgs :

135m Ω @ 2.6A, 4.5V

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

12V

Published :

2012

Continuous Drain Current (ID) :

2.6A

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Number of Terminations :

3

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 16V

Turn-Off Delay Time :

26 ns

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Series :

HEXFET®

Terminal Position :

Dual

Rise Time :

7.7ns

Number of Elements :

1

Threshold Voltage :

-1.1V

Height :

1.02mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Resistance :

236MOhm

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

-20V

Nominal Vgs :

-1.1 V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Vgs (Max) :

±12V

Recovery Time :

26 ns

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

16 ns

Power Dissipation-Max :

1.3W Ta

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Power Dissipation :

1.3W

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant