IRLM120ATF

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Mfr.Part #
IRLM120ATF
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 2.3A SOT223-4
Stock
27,433
In Stock :
27,433

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
2.3A Tc
Drain to Source Breakdown Voltage :
100V
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
2.3A
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
30
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Turn On Delay Time :
5 ns
Peak Reflow Temperature (Cel) :
250
Element Configuration :
Single
Terminal Form :
Gull wing
Terminal Position :
Dual
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
7 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
5V
Fall Time (Typ) :
9 ns
Vgs(th) (Max) @ Id :
2V @ 250μA
Mount :
Surface Mount
Weight :
188mg
Number of Terminations :
4
Terminal Finish :
Tin (Sn)
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Package / Case :
TO-261-4, TO-261AA
FET Type :
N-Channel
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 5V
Mounting Type :
Surface Mount
Number of Pins :
4
JESD-609 Code :
e3
Power Dissipation :
2.7W
Rise Time :
10ns
Power Dissipation-Max :
2.7W Tc
Turn-Off Delay Time :
19 ns
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 4 days ago)
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
220m Ω @ 1.15A, 5V
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.22Ohm
Datasheets
IRLM120ATF
Introducing Transistors - FETs, MOSFETs - Single onsemi IRLM120ATF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Pins:4, IRLM120ATF pinout, IRLM120ATF datasheet PDF, IRLM120ATF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRLM120ATF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRLM120ATF


N-Channel Tape & Reel (TR) 220m Ω @ 1.15A, 5V ±20V 440pF @ 25V 15nC @ 5V TO-261-4, TO-261AA

IRLM120ATF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 440pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V).

IRLM120ATF Features


a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 19 ns


IRLM120ATF Applications


There are a lot of ON Semiconductor
IRLM120ATF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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