IRLM120ATF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

7 Weeks

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

19 ns

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Fall Time (Typ) :

9 ns

ECCN Code :

EAR99

Rise Time :

10ns

Drain-source On Resistance-Max :

0.22Ohm

Number of Pins :

4

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

250

Radiation Hardening :

No

Weight :

188mg

Turn On Delay Time :

5 ns

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.15A, 5V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.7W Tc

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Mount :

Surface Mount

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Continuous Drain Current (ID) :

2.3A

Number of Terminations :

4

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Power Dissipation :

2.7W

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel