IRLM120ATF

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Mfr.Part #
IRLM120ATF
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 2.3A SOT223-4
Stock
27,433
In Stock :
27,433

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
30
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-261-4, TO-261AA
Vgs(th) (Max) @ Id :
2V @ 250μA
Factory Lead Time :
7 Weeks
Drain to Source Breakdown Voltage :
100V
Turn-Off Delay Time :
19 ns
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
5V
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Element Configuration :
Single
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Fall Time (Typ) :
9 ns
ECCN Code :
EAR99
Rise Time :
10ns
Drain-source On Resistance-Max :
0.22Ohm
Number of Pins :
4
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
250
Radiation Hardening :
No
Weight :
188mg
Turn On Delay Time :
5 ns
Rds On (Max) @ Id, Vgs :
220m Ω @ 1.15A, 5V
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
2.7W Tc
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Mount :
Surface Mount
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
2.3A Tc
Continuous Drain Current (ID) :
2.3A
Number of Terminations :
4
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 4 days ago)
Power Dissipation :
2.7W
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Datasheets
IRLM120ATF
Introducing Transistors - FETs, MOSFETs - Single onsemi IRLM120ATF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:4, Number of Terminations:4, IRLM120ATF pinout, IRLM120ATF datasheet PDF, IRLM120ATF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRLM120ATF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRLM120ATF


N-Channel Tape & Reel (TR) 220m Ω @ 1.15A, 5V ±20V 440pF @ 25V 15nC @ 5V TO-261-4, TO-261AA

IRLM120ATF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 440pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V).

IRLM120ATF Features


a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 19 ns


IRLM120ATF Applications


There are a lot of ON Semiconductor
IRLM120ATF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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