IRLM120ATF
- Mfr.Part #
- IRLM120ATF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 2.3A SOT223-4
- Stock
- 27,433
- In Stock :
- 27,433
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 19 ns
- Rise Time :
- 10ns
- Package / Case :
- TO-261-4, TO-261AA
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Fall Time (Typ) :
- 9 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Tc
- Drain-source On Resistance-Max :
- 0.22Ohm
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 1.15A, 5V
- Factory Lead Time :
- 7 Weeks
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 250
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation :
- 2.7W
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Weight :
- 188mg
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Turn On Delay Time :
- 5 ns
- Continuous Drain Current (ID) :
- 2.3A
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.7W Tc
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRLM120ATF

N-Channel Tape & Reel (TR) 220m Ω @ 1.15A, 5V ±20V 440pF @ 25V 15nC @ 5V TO-261-4, TO-261AA
IRLM120ATF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 440pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V).
IRLM120ATF Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 19 ns
IRLM120ATF Applications
There are a lot of ON Semiconductor
IRLM120ATF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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