IRLML2244TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Turn-Off Delay Time :

34 ns

REACH SVHC :

No SVHC

FET Type :

P-Channel

Power Dissipation-Max :

1.3W Ta

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.04mm

Factory Lead Time :

12 Weeks

Number of Pins :

3

ECCN Code :

EAR99

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 16V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

54m Ω @ 4.3A, 4.5V

Width :

1.4mm

Vgs (Max) :

±12V

Fall Time (Typ) :

25 ns

Recovery Time :

32 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mounting Type :

Surface Mount

Resistance :

95mOhm

Continuous Drain Current (ID) :

4.3A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Nominal Vgs :

-1.1 V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Rise Time :

12ns

Drain to Source Breakdown Voltage :

-20V

Height :

1.02mm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Terminal Form :

Gull wing

Threshold Voltage :

-1.1V

Number of Elements :

1

Turn On Delay Time :

7 ns

Series :

HEXFET®

Element Configuration :

Single

Radiation Hardening :

No

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.3W

Published :

2011