IRLML0100TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Height :

1.12mm

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

1.6A

JESD-609 Code :

e3

Resistance :

220mOhm

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Published :

1997

Number of Channels :

1

Number of Terminations :

3

Power Dissipation-Max :

1.3W Ta

Transistor Application :

SWITCHING

Fall Time (Typ) :

3.6 ns

Nominal Vgs :

2.5 V

Vgs (Max) :

±16V

Threshold Voltage :

2.5V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Width :

1.397mm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rise Time :

2.1ns

Gate to Source Voltage (Vgs) :

16V

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

9 ns

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

7A

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

2.2 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Length :

3.0226mm

Power Dissipation :

1.3W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Recovery Time :

30 ns

Time@Peak Reflow Temperature-Max (s) :

30