IRLML0100TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.3W Ta

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Terminal Form :

Gull wing

Threshold Voltage :

2.5V

Power Dissipation :

1.3W

Number of Terminations :

3

Max Junction Temperature (Tj) :

150°C

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Length :

3.0226mm

Continuous Drain Current (ID) :

1.6A

Width :

1.397mm

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.6A, 10V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

7A

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Rise Time :

2.1ns

Number of Channels :

1

Number of Pins :

3

Turn-Off Delay Time :

9 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

3.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Turn On Delay Time :

2.2 ns

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

Height :

1.12mm

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Recovery Time :

30 ns

Resistance :

220mOhm

Nominal Vgs :

2.5 V

JESD-609 Code :

e3

Terminal Position :

Dual

Number of Elements :

1

Element Configuration :

Single