IRLML0100TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Channels :

1

Terminal Form :

Gull wing

Turn On Delay Time :

2.2 ns

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

1.6A

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.6A, 10V

Max Junction Temperature (Tj) :

150°C

Resistance :

220mOhm

Length :

3.0226mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rise Time :

2.1ns

Number of Terminations :

3

Series :

HEXFET®

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Threshold Voltage :

2.5V

Fall Time (Typ) :

3.6 ns

Gate to Source Voltage (Vgs) :

16V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Height :

1.12mm

Recovery Time :

30 ns

Vgs (Max) :

±16V

Turn-Off Delay Time :

9 ns

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Width :

1.397mm

Power Dissipation-Max :

1.3W Ta

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Nominal Vgs :

2.5 V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation :

1.3W

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V