IRLML0100TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

220mOhm

Recovery Time :

30 ns

Transistor Element Material :

SILICON

Published :

1997

Max Junction Temperature (Tj) :

150°C

Series :

HEXFET®

Rise Time :

2.1ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

3.6 ns

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Turn On Delay Time :

2.2 ns

RoHS Status :

ROHS3 Compliant

Length :

3.0226mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Turn-Off Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Number of Elements :

1

Number of Pins :

3

Terminal Form :

Gull wing

Power Dissipation-Max :

1.3W Ta

Threshold Voltage :

2.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

16V

Number of Terminations :

3

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

7A

Number of Channels :

1

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.6A, 10V

Power Dissipation :

1.3W

Width :

1.397mm

Nominal Vgs :

2.5 V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Height :

1.12mm

Continuous Drain Current (ID) :

1.6A

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks