IRLML0100TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rise Time :

2.1ns

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.6A, 10V

Length :

3.0226mm

FET Type :

N-Channel

Power Dissipation-Max :

1.3W Ta

Number of Channels :

1

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Width :

1.397mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Height :

1.12mm

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Recovery Time :

30 ns

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

16V

Drain to Source Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Transistor Element Material :

SILICON

Published :

1997

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Vgs (Max) :

±16V

Element Configuration :

Single

Resistance :

220mOhm

Threshold Voltage :

2.5V

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.3W

Turn-Off Delay Time :

9 ns

Mount :

Surface Mount

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

7A

Number of Terminations :

3

Fall Time (Typ) :

3.6 ns

Qualification Status :

Not Qualified

ECCN Code :

EAR99

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Pins :

3

Continuous Drain Current (ID) :

1.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

2.5 V

Turn On Delay Time :

2.2 ns