IRLML0060TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

92m Ω @ 2.7A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2.5V

Gate to Source Voltage (Vgs) :

16V

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.12mm

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Recovery Time :

21 ns

Turn On Delay Time :

5.4 ns

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Fall Time (Typ) :

4.2 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Width :

1.397mm

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

FET Type :

N-Channel

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Published :

2009

Rise Time :

6.3ns

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±16V

Number of Elements :

1

JESD-609 Code :

e3

Mount :

Surface Mount

Turn-Off Delay Time :

6.8 ns

Power Dissipation-Max :

1.25W Ta

Element Configuration :

Single

Number of Pins :

3

Series :

HEXFET®

Resistance :

92mOhm

Continuous Drain Current (ID) :

2.7A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Nominal Vgs :

2.5 V

Length :

3.0226mm

Power Dissipation :

1.25W

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

60V

Max Junction Temperature (Tj) :

150°C