IRLML0060TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Vgs (Max) :

±16V

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.25W Ta

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 25µA

Peak Reflow Temperature (Cel) :

260

Height :

1.12mm

Width :

1.397mm

Resistance :

92mOhm

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

2.5 V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

16V

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Length :

3.0226mm

Rise Time :

6.3ns

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

6.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Continuous Drain Current (ID) :

2.7A

Qualification Status :

Not Qualified

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2009

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

92m Ω @ 2.7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Threshold Voltage :

2.5V

Turn On Delay Time :

5.4 ns

Terminal Position :

Dual

Recovery Time :

21 ns

Series :

HEXFET®

Fall Time (Typ) :

4.2 ns

REACH SVHC :

No SVHC

Power Dissipation :

1.25W

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V