IRLMS6802TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G6

ECCN Code :

EAR99

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

31 mJ

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.1A, 4.5V

Drain-source On Resistance-Max :

0.05Ohm

Drain Current-Max (Abs) (ID) :

5.6A

Vgs(th) (Max) @ Id :

1.2V @ 250µA

JESD-609 Code :

e3

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1079pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Pulsed Drain Current-Max (IDM) :

45A

Transistor Application :

SWITCHING

Package / Case :

SOT-23-6

Series :

HEXFET®

Transistor Element Material :

SILICON

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

5.6A Ta

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V