IRLMS6702TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

2.9972mm

Number of Terminations :

6

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 15V

Fall Time (Typ) :

18 ns

Number of Pins :

6

Drain to Source Breakdown Voltage :

-20V

Current Rating :

-2.3A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 4.5V

Rise Time :

20ns

Terminal Position :

Dual

Voltage - Rated DC :

-20V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 4.5V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Gate to Source Voltage (Vgs) :

12V

Package / Case :

SOT-23-6

Number of Elements :

1

Continuous Drain Current (ID) :

-2.4A

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

1.7W Ta

Published :

1997

Threshold Voltage :

-700mV

Resistance :

200mOhm

Element Configuration :

Single

Lead Free :

Lead Free

JESD-609 Code :

e3

Power Dissipation :

1.7W

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Turn-Off Delay Time :

21 ns

Turn On Delay Time :

13 ns

Width :

1.75mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mount :

Surface Mount

REACH SVHC :

No SVHC

Vgs (Max) :

±12V

Height :

1.4478mm