IRLMS2002TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

ECCN Code :

EAR99

Power Dissipation-Max :

2W Ta

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G6

Pulsed Drain Current-Max (IDM) :

20A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

8.5 ns

Drain to Source Breakdown Voltage :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mount :

Surface Mount

Voltage - Rated DC :

20V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Package / Case :

SOT-23-6

Transistor Element Material :

SILICON

Current Rating :

6.5A

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Turn-Off Delay Time :

36 ns

Continuous Drain Current (ID) :

6.5A

Terminal Position :

Dual

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Width :

1.75mm

JESD-609 Code :

e3

Nominal Vgs :

1.2 V

Number of Pins :

3

Vgs (Max) :

±12V

Length :

2.9972mm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Threshold Voltage :

1.2V

Additional Feature :

ULTRA-LOW RESISTANCE

FET Type :

N-Channel

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Element Configuration :

Single

Height :

1.143mm

Resistance :

300mOhm

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Power Dissipation :

2W

Rise Time :

11ns

Fall Time (Typ) :

16 ns

Series :

HEXFET®