IRLMS2002

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

6.5A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Package / Case :

SOT-23-6

Vgs(th) (Max) @ Id :

1.2V @ 250µA

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation-Max :

2W Ta

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Series :

HEXFET®

Number of Terminations :

6

JESD-30 Code :

R-PDSO-G6

Drain-source On Resistance-Max :

0.03Ohm

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Published :

2003

Operating Temperature (Max) :

150°C

FET Type :

N-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 15V

Terminal Form :

Gull wing

Terminal Position :

Dual

Vgs (Max) :

±12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Elements :

1

Additional Feature :

ULTRA-LOW RESISTANCE

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V