IRLMS1902TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G6

Terminal Position :

Dual

Vgs (Max) :

±12V

Published :

2004

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Continuous Drain Current (ID) :

3.2A

Radiation Hardening :

No

Current Rating :

3.2A

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Nominal Vgs :

700 mV

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 15V

Package / Case :

SOT-23-6

Drain to Source Breakdown Voltage :

20V

Resistance :

10Ohm

Height :

1.143mm

Turn-Off Delay Time :

12 ns

Vgs(th) (Max) @ Id :

700mV @ 250μA

Length :

2.9972mm

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Additional Feature :

High Reliability

JESD-609 Code :

e3

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.7W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.7W Ta

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Number of Pins :

3

Element Configuration :

Single

Number of Elements :

1

Fall Time (Typ) :

4 ns

REACH SVHC :

No SVHC

Mount :

Surface Mount

Width :

1.75mm

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 4.5V

Voltage - Rated DC :

20V

Rise Time :

11ns

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Mounting Type :

Surface Mount

Number of Terminations :

6

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Threshold Voltage :

700mV

Transistor Element Material :

SILICON