IRLMS1902TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Package / Case :

SOT-23-6

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 4.5V

JESD-30 Code :

R-PDSO-G6

Drain-source On Resistance-Max :

0.1Ohm

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Drain Current-Max (Abs) (ID) :

3.2A

Vgs (Max) :

±12V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Power Dissipation-Max :

1.7W Ta

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Published :

2004

Pulsed Drain Current-Max (IDM) :

18A

Transistor Application :

SWITCHING

FET Type :

N-Channel

ECCN Code :

EAR99

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 15V

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

700mV @ 250μA