IRLML6402TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Additional Feature :

High Reliability

Lead Free :

Lead Free

Threshold Voltage :

-550mV

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Current Rating :

-3.7A

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

381 ns

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-20V

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 10V

Voltage - Rated DC :

-20V

Rise Time :

48ns

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

588 ns

Number of Terminations :

3

Height :

1.12mm

Resistance :

65mOhm

Continuous Drain Current (ID) :

-3.7A

Drain to Source Voltage (Vdss) :

20V

Width :

1.397mm

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation :

1.3W

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.0226mm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

22A

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Max Junction Temperature (Tj) :

150°C

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.3W Ta

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

HEXFET®

Manufacturer Package Identifier :

Micro3

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Mount :

Surface Mount

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Dual Supply Voltage :

-20V

Turn On Delay Time :

350 ns

JESD-609 Code :

e3

Number of Elements :

1

Terminal Form :

Gull wing

Nominal Vgs :

-550 mV

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.7A, 4.5V

Radiation Hardening :

No