IRLML6402TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer Package Identifier :

Micro3

Voltage - Rated DC :

-20V

Width :

1.397mm

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 10V

ECCN Code :

EAR99

Current Rating :

-3.7A

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Dual Supply Voltage :

-20V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs (Max) :

±12V

Threshold Voltage :

-550mV

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.7A, 4.5V

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Number of Channels :

1

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

1.3W

Fall Time (Typ) :

381 ns

Power Dissipation-Max :

1.3W Ta

Lead Free :

Lead Free

Published :

2005

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Series :

HEXFET®

JESD-609 Code :

e3

Height :

1.12mm

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

588 ns

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Additional Feature :

High Reliability

Terminal Position :

Dual

Resistance :

65mOhm

Termination :

SMD/SMT

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Element Configuration :

Single

Nominal Vgs :

-550 mV

Length :

3.0226mm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Continuous Drain Current (ID) :

-3.7A

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

-20V

Rise Time :

48ns

Turn On Delay Time :

350 ns

Pulsed Drain Current-Max (IDM) :

22A

Drain to Source Voltage (Vdss) :

20V