IRLML6402GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn-Off Delay Time :

588 ns

Lead Free :

Lead Free

Turn On Delay Time :

350 ns

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Gate to Source Voltage (Vgs) :

12V

Pulsed Drain Current-Max (IDM) :

22A

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.7A, 4.5V

JESD-609 Code :

e3

Number of Elements :

1

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Continuous Drain Current (ID) :

-3.7A

Radiation Hardening :

No

Power Dissipation-Max :

1.3W Ta

Fall Time (Typ) :

381 ns

Mount :

Surface Mount

Additional Feature :

High Reliability

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Power Dissipation :

1.3W

Operating Temperature :

-55°C~150°C TJ

Length :

3.0226mm

Element Configuration :

Single

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Type :

P-Channel

Series :

HEXFET®

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Terminal Form :

Gull wing

Resistance :

65mOhm

Factory Lead Time :

18 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Height :

1.12mm

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Rise Time :

48ns

Vgs (Max) :

±12V

Packaging :

Tape and Reel (TR)

Width :

1.397mm

Manufacturer Package Identifier :

IRLML6402GTRPBF