IRLML6401TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

950mV @ 250μA

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Fall Time (Typ) :

210 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

3.0226mm

Continuous Drain Current (ID) :

-4.3A

Number of Pins :

3

Number of Channels :

1

Height :

1.12mm

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Resistance :

50mOhm

Power Dissipation :

1.3W

Time@Peak Reflow Temperature-Max (s) :

30

Width :

1.397mm

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Termination :

SMD/SMT

Terminal Position :

Dual

Mounting Type :

Surface Mount

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current Rating :

-4.3A

Contact Plating :

Tin

Vgs (Max) :

±8V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-12V

Published :

2003

FET Type :

P-Channel

Turn-Off Delay Time :

250 ns

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-12V

Turn On Delay Time :

11 ns

Power Dissipation-Max :

1.3W Ta

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

150°C

Dual Supply Voltage :

-12V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.3A, 4.5V

Rise Time :

32ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 10V

Nominal Vgs :

-550 mV

Threshold Voltage :

-550mV