IRLML6401TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.05Ohm

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

1.3W

Drain to Source Voltage (Vdss) :

12V

JEDEC-95 Code :

TO-236AB

FET Type :

P-Channel

Series :

HEXFET®

Additional Feature :

High Reliability

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Elements :

1

DS Breakdown Voltage-Min :

12V

Published :

2003

Avalanche Energy Rating (Eas) :

33 mJ

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

4.3A

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.3A, 4.5V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

34A

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature (Max) :

150°C