IRLML6346TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Continuous Drain Current (ID) :

3.4A

Terminal Finish :

Matte Tin (Sn)

Recovery Time :

13 ns

Qualification Status :

Not Qualified

Number of Elements :

1

Resistance :

80mOhm

Rds On (Max) @ Id, Vgs :

63m Ω @ 3.4A, 4.5V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

12 ns

Number of Terminations :

3

Width :

1.4mm

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

800mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.12mm

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

800 mV

Turn On Delay Time :

3.3 ns

Manufacturer Package Identifier :

Micro3

Rise Time :

4ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Length :

3.04mm

Fall Time (Typ) :

4.9 ns

Mount :

Surface Mount

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 24V

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Transistor Element Material :

SILICON

Power Dissipation :

1.3W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Power Dissipation-Max :

1.3W Ta

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Published :

2012

Factory Lead Time :

12 Weeks

Vgs (Max) :

±12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel