IRLML6344TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

4.2 ns

Factory Lead Time :

12 Weeks

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

5A

FET Type :

N-Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5A Ta

RoHS Status :

ROHS3 Compliant

Resistance :

37mOhm

REACH SVHC :

No SVHC

Width :

1.4mm

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 4.5V

Fall Time (Typ) :

9.1 ns

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Threshold Voltage :

800mV

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Recovery Time :

15 ns

ECCN Code :

EAR99

Element Configuration :

Single

Rise Time :

5.6ns

Turn-Off Delay Time :

22 ns

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

800 mV

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

Mount :

Surface Mount

Lead Free :

Lead Free

Height :

1.12mm

Length :

3.04mm

Power Dissipation :

1.3W

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

5A

Published :

2010

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

JESD-609 Code :

e3

Power Dissipation-Max :

1.3W Ta

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V