IRLML6246TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Power Dissipation :

1.3W

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Element Configuration :

Single

Recovery Time :

13 ns

Rise Time :

4.9ns

ECCN Code :

EAR99

Number of Pins :

3

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

1.1V @ 5μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Series :

HEXFET®

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4.5V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

12V

Vgs (Max) :

±12V

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 16V

Resistance :

46mOhm

Rds On (Max) @ Id, Vgs :

46m Ω @ 4.1A, 4.5V

Gate to Source Voltage (Vgs) :

12V

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Length :

3.0226mm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Power Dissipation-Max :

1.3W Ta

Mount :

Surface Mount

Turn On Delay Time :

3.6 ns

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Height :

1.016mm

Fall Time (Typ) :

6 ns

Radiation Hardening :

No

Turn-Off Delay Time :

11 ns

Width :

1.397mm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

4.1A