IRLML5203

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.098Ohm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature (Max) :

150°C

Vgs (Max) :

±20V

Number of Terminations :

3

Power Dissipation-Max :

1.25W Ta

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

98m Ω @ 3A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

Packaging :

Tube

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

3A

Pulsed Drain Current-Max (IDM) :

24A

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

FET Type :

P-Channel

Published :

2003

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3