IRLML5103TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 10V

Drain to Source Breakdown Voltage :

-30V

Length :

3.0226mm

Lead Free :

Lead Free

Terminal Position :

Dual

Number of Terminations :

3

Transistor Application :

SWITCHING

Min Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

600m Ω @ 600mA, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V

Width :

1.397mm

Peak Reflow Temperature (Cel) :

260

Termination :

SMD/SMT

Qualification Status :

Not Qualified

Rise Time :

8.2ns

Threshold Voltage :

-1V

Drain Current-Max (Abs) (ID) :

0.76A

Transistor Element Material :

SILICON

Number of Elements :

1

Element Configuration :

Single

Height :

1.016mm

JESD-609 Code :

e3

Manufacturer Package Identifier :

Micro(SOT23)

Fall Time (Typ) :

16 ns

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-760mA

Voltage - Rated DC :

-30V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Nominal Vgs :

-1 V

Current - Continuous Drain (Id) @ 25°C :

760mA Ta

Published :

2004

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

-610mA

FET Type :

P-Channel

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

540mW

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Turn-Off Delay Time :

23 ns

Mounting Type :

Surface Mount

Dual Supply Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

600mOhm

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

540mW Ta

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1V @ 250μA