IRLML2803TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

9 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Contact Plating :

Tin

Number of Pins :

3

Terminal Form :

Gull wing

Voltage - Rated DC :

30V

Number of Elements :

1

Min Breakdown Voltage :

30V

Number of Terminations :

3

Published :

2007

Resistance :

250mOhm

Current Rating :

1.2A

Drain to Source Breakdown Voltage :

30V

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Length :

3.0226mm

Mount :

Surface Mount

Rise Time :

4ns

Dual Supply Voltage :

30V

Width :

1.397mm

Power Dissipation-Max :

540mW Ta

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Additional Feature :

High Reliability

Threshold Voltage :

1V

Nominal Vgs :

1 V

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 250μA

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Manufacturer Package Identifier :

Micro3

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

REACH SVHC :

No SVHC

Number of Channels :

1

Power Dissipation :

540mW

Lead Free :

Lead Free

Element Configuration :

Single

Vgs (Max) :

±20V

Height :

1.12mm

Fall Time (Typ) :

1.7 ns

Factory Lead Time :

12 Weeks

Turn On Delay Time :

3.9 ns

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

250m Ω @ 910mA, 10V

Continuous Drain Current (ID) :

1.2A

Transistor Element Material :

SILICON

ECCN Code :

EAR99