IRLML2502TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Series :

HEXFET®

Terminal Position :

Dual

FET Type :

N-Channel

Packaging :

Cut Tape (CT)

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-236AB

Drain-source On Resistance-Max :

0.045Ohm

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.2A, 4.5V

Pulsed Drain Current-Max (IDM) :

33A

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Power Dissipation-Max (Abs) :

1.25W

Published :

2003

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

4.2A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Operating Temperature (Max) :

150°C

Additional Feature :

High Reliability

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30